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Isolated SiC gate driver operates up to 1700 V

STMicroelectronics’ STGAP2SiCSN single-channel gate driver, optimized for silicon carbide (SiC) MOSFETs, is housed in a space-saving narrow-body SO-8 package. With high PWM control accuracy, the isolated SiC gate driver targets applications such as electric-vehicle charging systems, switched-mode power supplies, high-voltage power-factor correction (PFC), DC/DC converters, uninterruptible power supplies (UPS), solar power, motor drives, fans, factory automation, home appliances, and induction heating.

STMicroelectronics STGAP2SiCSN isolated SiC gate driver

Click for a larger image. (Source: STMicroelectronics)

The STGAP2SiCSN operates with up to 1700 V on the high-voltage rail and features galvanic isolation between the gate-driving channel and the low-voltage control The device also features an input-to-output propagation time of less than 75 ns, which ensures high PWM accuracy, with reliable switching thanks to common-mode transient immunity (CMTI) of ±100 V/ns, said STMicroelectronics.

Built-in protection features include under-voltage lockout (UVLO), with a threshold tuned to prevent SiC power switches from operating in low-efficiency or unsafe conditions, and thermal shutdown that turns both driver outputs low if excessive junction temperature is detected.

Two optional configurations are available. They give designers a choice of separate outputs that allow turn-on and turn-off times to be independently optimized using an external resistor or a single output with active Miller clamp function. The single output configuration improves stability in high-frequency hard-switching applications, leveraging the Miller clamp to prevent excessive oscillation of the power switch, said the company.

STMicroelectronics STGAP2SiCSN SiC gate driver

(Source: STMicroelectronics)

The STGAP2SiCSN logic inputs are compatible with TTL and CMOS logic down to 3.3 V, which simplifies the connection to a host microcontroller or DSP. The driver can sink and source up to 4 A at a gate-driving voltage up to 26 V. Other features include an integrated bootstrap diode and a shutdown mode with a separate input pin to minimize system power consumption.

The STGAP2SiCSNTR is available in the 5 × 4 mm-wide SO-8N package, priced from $1.25 for 1,000-piece orders. Click here for more information about STMicroelectronics’ STDRIVE gate drivers.

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